You need a TVS diode because many voltage regulators do not have the ability to sink current, nor can they respond fast ...

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he decided to convert it to work with silicon transistors. He also made some improvements to the push-pull bias circuit and limited the high-frequency response. As for the finished product ...

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Additionally, the NN model provides accurate simulations of the bias and frequency dependence in the active region of the device. The proposed approach was applied to GaN High Electron Mobility ...

except for zero drain bias and beyond saturation. The noise resistance of the device is approximately equal to gmax/g,m2, where gm is the transconductance of the transistor and gmax its maximum value.